摘要
采用射频磁控溅射法在PEN衬底上室温制备了AZO薄膜,并对不同工作气压下(0.05～0.4Pa)沉积薄膜的结构及光电性能进行了研究。结果表明,薄膜具有良好的c轴择优取向,随工作气压增大,薄膜(002)峰强度减弱,晶粒减小,表面粗糙度增大,电学性能下降,薄膜可见光透过率变化不大,但禁带宽度变窄。与玻璃衬底相比,PEN衬底上沉积的AZO薄膜拥有更高的品质因数,获得的最佳电阻率、载流子浓度和霍尔迁移率分别为1.11×10-3Ω.cm、4.14×1020cm-3和13.60cm2/(V.s),该薄膜可见光的绝对透射率达到95.7%。
AZO thin films were prepared on PEN substrate by r.f.magnetron sputtering method at room temperature.The structural,optical and electrical properties of the films deposited under varied working pressure （0.05-0.4Pa） were investigated.The results showed that films exhibited good c-axis preferred orientation.Increased working pressure reduced the intensity of （002） peak and grain size,roughened the film surface,and debased the electrical properties.Film transmittance in visible range changed little at higher working pressure,but the optical band gap was narrowed down.Compared with those on glass substrate,films on PEN exhibited higher figure of merit,with optimized resistivity of 1.11×10-3Ω·cm,carrier concentration of 4.14×1020cm-3,hall mobility of 13.60cm2/（V·s）,and an absolute visible transmittance of 95.7%.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2010年第7期1154-1157,共4页
Journal of Functional Materials
基金
国家高技术研究发展计划(863计划)资助项目(2006AA03Z219)
关键词
AZO薄膜
磁控溅射
工作气压
PEN衬底
AZO thin films
magnetron sputtering
working pressure
PEN substrate
