摘要
Ni/Sn couples, prepared by sequentially electroplating Ni layers and Sn layers on metallized Si wafers, were employed to study the microstructures and growth kinetics of Ni-Sn intermediate phases, when the Ni/Sn couples were aged at room temperature or armealed at temperatures from 150 to 225℃ for various times. The results show that the NiSn phase and Ni3Sn4 phase are formed, respectively, in the aged couples and annealed couples. The Ni3Sn4 layer is continuously distributed between the Ni and Sn sides in the annealed Ni/Sn couples. The Ni3Sn4 growth follows parabolic growth kinetics with an apparent activation energy of 39.0 kJ/mol.
Ni/Sn couples, prepared by sequentially electroplating Ni layers and Sn layers on metallized Si wafers, were employed to study the microstructures and growth kinetics of Ni-Sn intermediate phases, when the Ni/Sn couples were aged at room temperature or armealed at temperatures from 150 to 225℃ for various times. The results show that the NiSn phase and Ni3Sn4 phase are formed, respectively, in the aged couples and annealed couples. The Ni3Sn4 layer is continuously distributed between the Ni and Sn sides in the annealed Ni/Sn couples. The Ni3Sn4 growth follows parabolic growth kinetics with an apparent activation energy of 39.0 kJ/mol.
基金
the Natural Sciences and Engineering Research Council(NSERC) of Canada and Micralyne Inc.for providing the research fund and Si substrates for electroplating(Micralyne)
