摘要
The behavior of resistance high-g impact of EMC （epoxy molding compound） with two package models, small outline package （POS） and Globtop, was evaluated by experimental method used Hopkinson bar. At 120,000 g （generated in the Hopkinson bar with widths about 70 μs） no damage in either the POS devices or the Globtop devices was observed. In order to enhance the EMC＇s ability of resistance high-g impact, buffering effect of epoxy resin was also studied. The experimental results above all show that EMC has a better performance of impact resistance at about 120,000 g, and epoxy resin can absorb the stress wave to have the protected ability. The study of this paper could serve as a basis for selection packaging materials and enhance its reliability in high-g impact environment.
The behavior of resistance high-g impact of EMC （epoxy molding compound） with two package models, small outline package （POS） and Globtop, was evaluated by experimental method used Hopkinson bar. At 120,000 g （generated in the Hopkinson bar with widths about 70 μs） no damage in either the POS devices or the Globtop devices was observed. In order to enhance the EMC＇s ability of resistance high-g impact, buffering effect of epoxy resin was also studied. The experimental results above all show that EMC has a better performance of impact resistance at about 120,000 g, and epoxy resin can absorb the stress wave to have the protected ability. The study of this paper could serve as a basis for selection packaging materials and enhance its reliability in high-g impact environment.
基金
Funded by the State Key Laboratory Foundation of China (No.9140C120704060C12)
the Science and Technology Development Project of Universiti-esin of Shanxi Province
