摘要
以正丁醉钛和硝酸铋为原料,用Sol-Gel技术分别在Pt/Ti/Si/、Si、Y-ZrO2、SrTiO3(100)和石英玻璃基片上生长出C轴取向的Bi4Ti3O12薄膜.研究了衬底材料表面结构对Bi4Ti312薄膜取向度的影响.晶格失配能和Bi4Ti3O12晶体的晶面能决定了薄膜的取向程度.
The c - axis oriented Bi4Ti3O12 thin films were gained on Si, Y - ZrO2, SrTiO3 (100 ) single crystal substrates and Pt/Ti/Si, fused quartz substrates by sol - gel process with bismuth nitrate and titanium butoxide. It is discussed that the lattice structure of substrates affects the orientation degree of Bi4Ti3O12 thin films. The orientation degree of the films depends on the lattice siructure of substrates and the plane surface energy of Bi4Ti3O12.
出处
《湖北大学学报(自然科学版)》
CAS
1999年第1期40-43,共4页
Journal of Hubei University:Natural Science
基金
湖北省教委重点课题
关键词
铁电薄膜
溶胶-凝胶法
取向度
钛酸铋
铁电材料
Bi_4Ti_3O_(12) ferroelectric thin films
Sol- Gel
c - axis orientation degree
Lattice misfit eneray