P-GeSi/P-Si探测器的研制

The Manufacture of P GeSi/P Si Photodetector

采用ＭＢＥ法在Ｓｉ衬底上生长ＧｅＳｉ异质结，制成ＧｅＳｉ／Ｓｉ异质结探测器。测得其反向击穿电压为１５Ｖ左右，光响应为０．

The GeSi layer is grown by using MBE on si wafers,and the photodetectior of GeSi Heterojunction has been manufactured,it's reverse penetrating voltage is about 15v. The light response is 0.5mA.