摘要
论述碳钢渗硅组织中孔隙形成原因的有关理论；采用金相、X-射线结构分析、电子探针和离子质谱分析等方法，测定渗硅层的组织结构和成分，并探讨孔隙形成和变化的规律。实验证明，渗硅层中孔的形成，除了铁硅互扩散的柯肯达尔效应之外；是渗硅时催渗剂-卤化物对钢腐蚀所引起的。
The theory on pore formation in the siliconized layer of the carbon steel was proposed. The microstructure and components of the siliconized layer were determined by the means of metallography, X-ray structure analysis, electromicro probe analysis and secondary ion mass analysis. The pore formation mechanism and variation were discussed. The results showed that the main formation causes of pore in the siliconized layer were Kirrkendall effect and the etching on the steel by the halide of activating agent.
出处
《上海金属》
EI
CAS
1999年第2期54-59,共6页
Shanghai Metals
