〈211〉方向InSb单晶横截面的均匀性研究

Study on Homogeneity of Impurities Distributed on Cross Section of InSb Single Crystal of〈211〉Orientation

借助于低温下标准样品的霍耳测量分析方法,测定了[111]晶向同[211]晶向(111)面上的杂质浓度分布,为制得径向上杂质浓度分布较均匀的材料指出了一条有效途径。

By means of measuring hall effect of standard samples at low tempera-tures,the distribution of impurities on plane (111) of 〈111〉 and 〈211〉orientations are determined,which points out an effective way to prepare material with homogeneous distribution of impurities at radial orientations.