用组合靶溅射制备Nd_2Fe_(14)B薄膜的研究

Study on the Sputtered Nd2Fe14B Thin Films with Composite Target

采用单质Ｆｅ、Ｎｄ、Ｂ组成的靶，用对向靶溅射系统制备出了含有Ｎｄ２Ｆｅ１４Ｂ相的薄膜。发现Ｎｄ２Ｆｅ１４Ｂ相能够较好地形成的基板温度范围是５００℃～６００℃。并且相对于热氧化硅基板（ＳｉＯ２／Ｓｉ）。

The Nd2Fe14B phase could be formed in thin films by using a composite target.The 2141 phase was best formed when the films were sputtered onto 500600 substrates.Nd2Fe14B phase was better formed on Ta substrates than on surfitially oxidized Si (SiO2/Si) substrates.