摘要
采用射频-直流等离子增强化学气相沉积技术用C2H2和N2气的混合气体制备出a-C∶H(N)薄膜,用TEM、红外谱、XPS等多种分析测试手段研究了薄膜的结构。结果表明a-C∶H(N)薄膜中N与C原子可形成NC、CN和NC键,而碳氢原子主要以CH2基的形式存在。且薄膜中存在具有理想化学配比的C3N4相。
The a-CH(N) films were deposited from mixture of C2H2 and N2 by r.f.-d.c. PECVD method.The films were characterized by TEM,FTIR and XPS.Results show that N atoms are incorporated in a-CH(N) films as C N , C N and C N bonds. C atoms are incorporated with H mainly as CH2.The stoichiometry exist in a-CH(N) films, and a-CH(N) films are consisted of C3N4 crystallite phase and CN x matrix which is identified as predominantly sp2 bonded structure.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1999年第2期200-201,206,共3页
Journal of Functional Materials