等离子体辅助反应式脉冲激光熔蚀制备AlN薄膜的低温生长

Low Temperature Growth of AlN Thin Films Deposited by Reactively Pulse-Laser Ablation with Plasma-Assisted

使用等离子体辅助反应式脉冲激光溅射沉积薄膜的方法在Ｓｉ（１１１）和Ｓｉ（１００）基片上已经成功地低温制备出ＡｌＮ多晶膜。实验表明，当脉冲能量密度ＤＥ＝１．０Ｊ·ｃｍ－２，脉冲频率ｆ＝５Ｈｚ，氮气气压ＰＮ２＝１．３３×１０４Ｐａ，基底温度ｔｓｕｂ＝２００℃，放电电压Ｖ＝６５０Ｖ，基靶距离ｄＳ－Ｔ＝４ｃｍ时薄膜的生长速度等于６ｎｍ／ｍｉｎ。ＡｌＮ薄膜的折射率为２．０５，和基底的取向关系分别为：ＡｌＮ（１１０）∥Ｓｉ（１１１）和ＡｌＮ（１００）∥Ｓｉ（１００）。

AlN (Aluminum Nitride) polycrystalline films have been deposited by reactively pulsed laser ablation with plasmaassisted at low temperature.Experimental results show the prepared AlN thin films with preferential orientation when substrate temperature is higher than 50.The growth rate of AlN films is 6nm/min (as pulse frequency of 5Hz),the refractive index of films is 2.05,and the oriented relation between films and substrate is AlN (110)Si(111) and AlN (100)Si(100) with 1.0Jcm-2 pulse energy density,1.33104 Pa N2 pressure,200 substrate temperature,650V discharging voltage,5Hz pulse frequency and 4cm substratetarget distance respectively.