1.3μm InGaAsP DCC结构半导体激光器的远场分布

Far-Field Distribution of 1.3μm InGaAsP/Inp DCC Structure Semiconductor Laser

采用强耦合方法，计算了ＩｎＧａＡｓＰ／ＩｎＰＤＣＣ双源五层平面波导结构半导体激光器的远场分布，得到了薄夹层厚度与空间发散角的依赖关系．理论计算与实验结果进行了对比，二者具有很好的一致性．分析了ＤＣＣ结构半导体激光器第一有源区的激励作用和第二有源区Ｆ－Ｐ腔标准具的选模作用及双有源区对空间发散角的影响．

Far-field pattern of 1.3μm InGaAsP/InP DCC structure semiconductor laser is calculated by the strong coupling method. Experimental data are in agreement with the theoretical results with the bearm divergence θ ⊥<30°. Space conherence characteristic of 1.3μm InGaAsP/InP DCC structure semiconductor laser is good. The impellent action of the 1st active layer and the selection mode action of the 2nd active layer as a P-F cativy are analysed for DCC structure laser.