正交实验法优化六方氮化硼薄膜的制备工艺

Optimized fabrication technology of h-BN films by orthogonalexperiment

采用射频磁控溅射法,在Si(100)衬底上制备了适用于声表面波(SAW)器件的氮化硼(BN)薄膜。通过正交实验法,以薄膜中六方相的纯度和取向为指标,优化了磁控溅射方法制备六方BN(h-BN)薄膜的工艺条件。利用傅里叶变换红外光(FTIR)谱和X射线衍射(XRD)谱对薄膜进行了表征,实验结果表明,溅射功率为300W、无衬底负偏压、温度为400℃和N2∶Ar=7∶8vol.%时可以制备出高纯度且高c-轴择优取向的h-BN。

Boron nitride films for SAW devices were deposited on Si（100）wafers by RF magnetron sputtering.The purity and orientation of h-BN in the films was investigated by fourier transform infrared（FTIR）spectroscopy and X-ray diffraction（XRD）spectra.To optimize the RF magnetron sputtering technology,an orthogonal experiment design was used with sputtering time fixed at 2 h,distance from target to substrate of 6 cm,and the working pressure of 0.75 Pa.FTIR spectroscopy and XRD spectra show that high purity and c-axis oriented h-BN films can be prepared by RF magnetron sputtering with the substrate temperature of 400 ℃,the N2∶Ar ratio of 7∶8（vol.%）,the sputtering power of 300 W and no substrate negative bias.