In_2O_3和ZnO混合薄膜的化学腐蚀特性研究

Effect of chemical etching on the properties of indium oxide and zinc oxide mixed transparent conductive film

利用直流磁控溅射在未加热的BK-7玻璃基片上沉积In2O3与ZnO混合(IZO)薄膜,通过原子力显微镜(AFM)、分光光度计和四探针法研究IZO薄膜在HCl溶液中不同腐蚀时间前后的表面形貌以及光电性质的变化。结果表明:随着腐蚀时间的增加,薄膜的表面均方根粗糙度(RMS)和方块电阻(Rs)都呈现先增后减再增的现象;而薄膜的光学透射率则是先减后增再减。由于ZnO比In2O3更容易在HCl溶液中进行腐蚀,使得样品经腐蚀后出现孔洞结构,孔宽与孔深都随着腐蚀时间的增加而增大,这种具有纳米孔洞结构的透明导电薄膜在未来的光电子器件有潜在应用。

Indium oxide and zinc oxide mixed transparent conductive films are deposited on unheated BK-7 glass substrates by direct current magnetron sputtering,and then are chemical etched in 0.1% hydrochloric acid with different time.The surface morphology,transmittance and electrical properties are analyzed by atomic force microscopy,spectrophotometer and four-probe method,respectively.The experimental results show that the surface roughness and sheet resistance of the samples firstly increase,then decrease and increase at last when the wetetching time increases.Correspondingly,the transmittance of samples firstly decreases,then increases and decreases at last.The chemical etching rate of ZnO is higher than that of In2O3,which results in the hole structure in the samples,and the hole width and hole depth increase with the increase of wet-etching time.It is believed that the transparent conductive films with nano-hole structure can be used in future optoelectronic devices.