期刊文献+

GaN基LED电流分布的模拟 被引量:6

Simulation and Optimization of Current Distribution in GaN-based LEDs
下载PDF
导出
摘要 采用Silvaco软件,利用二维有限元方法,仿真得到LED的电学等特性。比较3种不同尺寸的LED器件内的电流分布,得到电流密度与L的关系曲线,发现减小电流扩展长度L可提高电流的均匀性。模拟了5种不同电极结构的1 mm×1 mm功率LED,发现五插指电极结构的电流分布最均匀。 Electrical properties of a LED(light emitting diode) is simulated with the software of SILVACO,by using two-dimensional finite element method.The current distributions of three LEDs of different size are compared,and the relationship between the current density and L is found,which indicates that current uniformity can be improved by reducing the current expansion length(L).Five different kinds of power LEDs with a chip size of 1 mm×1 mm and with different electrode structures are simulated and compared,and the optimal electrode structure is found.
出处 《电子科技》 2010年第8期43-46,共4页 Electronic Science and Technology
基金 GaN高亮度蓝光LED产业化基金资助项目(HX0101050116)
关键词 GAN LED 电流分布 电极结构 GaN LED current spreading electrode structure
  • 相关文献

参考文献4

二级参考文献43

共引文献78

同被引文献24

  • 1康香宁,章蓓,胡成余,王琦,陈志忠,张国义.高反射率p-GaN欧姆接触电极[J].发光学报,2006,27(1):75-79. 被引量:5
  • 2乐清平安防爆电器有限公司.矿井照明的分析与设计[EB/OL].(2011-11-19)[2012-05-11]http://b2b.bjx.com.cn/8441757/b2bnews一261347.html.
  • 3中国强制性国家标准汇编.GB3836.4-2000:电工卷[S].北京:中国标准出版社,2003.
  • 4FAIRCHILD S. KA5X03XX - SERIES fairchild power switch [ M ]. USA : Lake Press ,2003.
  • 5CHANG S J,SHEN C F,CHEN W S,et al.Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes [J].Electrochemical and Solid-State Letters,2007,10(6):H175-H177.
  • 6LEE C M,CHUO C C,LIU Y C,et al.InGaNGaN MQW LEDs with current blocking layer formed by selec-tive activation [J].IEEE Electron Device Letters,2004,25(6):384.
  • 7CHANG C S,CHANG S J,SU Y K,et al.Nitride based power chip with indium-tin-oxide p-contact and A1 back-side reflector [J].Japanese Journal of Applied Physics,2005,44(4S):2462-2464.
  • 8KAO C C,SU Y K,LIN C L.Enhancement of light output power of GaN-based light-emitting diodes by a reflective current blocking layer [J].IEEE Photonics Technology Letters,2011,23(14):986-988.
  • 9沈光地,张剑铭,邹德恕,徐晨,顾晓玲.大功率GaN基发光二极管的电流扩展效应及电极结构优化研究[J].物理学报,2008,57(1):472-476. 被引量:8
  • 10尹甲运,刘波,张森,冯志宏,冯震,蔡树军.Si(111)衬底上GaN外延材料的应力分析[J].微纳电子技术,2008,45(12):703-705. 被引量:6

引证文献6

二级引证文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部