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用于单片集成热真空传感器的Σ-Δ调制器设计 被引量：1

Design of Σ-Δ Modulator for Monolithic Integrated Thermal Vacuum Sensors
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摘要 设计了一款适用于集成热真空传感器的二阶1位Σ-Δ调制器。该调制器采用前馈通道抑制积分器的输出摆幅、降低谐波失真、提高动态范围。为了降低运算放大器的1/f噪声,积分器中引入相关双采样电路。利用Matlab/Simulink,分析运算放大器的非理想性对调制器性能的影响。调制器由全差分开关电容电路实现。仿真结果表明:在4 MHz采样频率和6.8 kHz信号输入频率-3、dBFS幅值下,电路的最大信噪比为86.9 dB,分辨率可达14位。调制器的有效面积为0.67 mm2。3 V电源电压供电时,功耗为12 mW,各项性能指标均满足设计要求。 A 2nd-order single-bit Σ-Δ modulator was designed for integrated thermal vacuum sensor,in which feed-forward paths were adopted to restrain output swing,reduce harmonic distortion and improve dynamic range.Correlated double-sampling circuit was used in the integrator to reduce 1/f noise of the operational amplifier.Effects of non-idealities of the op-amp on the modulator were analyzed with Matlab/Simulink.The modulator was realized by using fully differential switched capacitor circuit.Simulation results showed that the circuit had a peak SNR of 86.9 dB and a 14-bit of resolution at 4 MHz sampling rate and 6.8 kHz input frequency for-3 dBFS amplitude.Consuming 12 mW of power from 3 V supply voltage,the Σ-Δ modulator occupies an active area of 0.67 mm2.And all specifications meet the design target.
作者 李金凤 唐祯安
机构地区 大连理工大学电子工程系 沈阳化工学院信息工程学院
出处 《微电子学》 CAS CSCD 北大核心 2010年第4期485-490,共6页 Microelectronics
基金 国家自然科学基金资助项目(90607003)
关键词 集成传感器 Σ-Δ调制器 相关双采样 开关电容电路 Integrated sensor Σ-Δ modulator Correlated double-sampling Switched capacitor circuit
分类号 TN761 [电子电信—电路与系统]
  • 相关文献

参考文献12

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二级参考文献7

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同被引文献7

  • 1MASTRANGELO C H, MULLER S R. Microfabricated thermal absolute pressure sensor with on-chip digital front-end processor [J]. IEEE Journal of Solid-State Circuit, 1991, 26 (12): 1998-2007.
  • 2WITVROUW A, STEENKISTE F V, MAES D, et al. Why CMOS-integrated transducers? a review [J]. Microsystem Technologies, 2000, 6 (1): 192-199.
  • 3HABERLI A, PAUL O, MALCOVATI P. CMOS integration of a thermal pressure sensor system [ C ] // Proceedings of IEEE International Symposium on Circuits and Systems. Atlanta, USA, 1996: 377-380.
  • 4KLAASSEN E H, KOVACS G T A. Integrated thermal conductivity vacuum sensor [ J]. Sensors and Actuators: A, 1997, 58 (1): 37-42.
  • 5WANG J Q, TANG Z A, LI J F, et. al. A micropirani pressure sensor based on the tungsten microhotplate in a standard CMOS process [J]. IEEE Transactions on Industrial Electronics, 2009, 56, (4) : 1086 - 1091.
  • 6SCOTT M D, BOSER B E. An ultra low energy ADC for smart dust [J]. IEEE Journal of Solid State Circuits, 2003, 38 (7): 1123-1129.
  • 7张凤田,唐祯安,汪家奇,余隽.A Monolithic Integrated CMOS Thermal Vacuum Sensor[J].Journal of Semiconductors,2008,29(6):1103-1107. 被引量：2

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微电子学
2010年 第4期

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