摘要
针对多晶硅淀积工艺对半导体桥性能影响严重的问题,开展多晶硅工艺优化实验,获得多晶硅淀积工艺优化条件,多晶硅半导体桥电阻稳定控制在1±0.07 Ω范围内,达到多晶硅桥的应用要求。
Polysilicon deposition process has great effect on the performance of polysilicon semiconductor bridge.Process conditions of polysilicon deposition were optimized through experiments.With these optimized conditions,resistance of the polysilicon semiconductor bridge was controlled to 1±0.07 Ω,which satisfies the requirements of polysilicon semiconductor bridge.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第4期601-603,共3页
Microelectronics
关键词
半导体工艺
多晶硅电阻
半导体桥
Semiconductor process
Polysilicon resistor
Semiconductor bridge