三代半导体材料构成光子晶体能态密度的研究

Density states of photonic crystal with three generation of semiconducting material

基于光子晶体广泛应用,本文利用平面波展开法研究了三代半导体材料构成三角晶格光子晶体能态密度分布规律。得到了当Si作为背景材料构成光子晶体在f=0.25时构成最大光子禁带。AlP作为背景材料构成光子晶体在f=0.24时构成最大光子禁带。GaN作为背景材料构成光子晶体在f=0.3时构成最大光子禁带。三代半导体构成光子晶体对应最大光子晶体禁带宽度较第一二代逐渐增大,研究结果为光子晶体器件的构造提供理论依据。

The application of photonic crystal,density states of triangle lattice photonic crystal with three generation of semiconducting material were calculated by plane wave expansion method（PWM）.We gained maximum photonic band gap with f=0.25 in the background material′s Si,and f=0.24 in the background material′s AlP,and f=0.3 in the background material′s GaN.Maximum photonic crystal band gap of three generation of semiconductor constitution photonic crystal increases gradually compared to the first generation and the second generation.This result provides theoretic basis theoretic basis for the photonic crystal devices.