摘要
Two SiO_2/Si interface structures,which are described by the double bonded model（DBM） and the bridge oxygen model（BOM）,have been theoretically studied via first-principle calculations.First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM.Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO_2/Si interface structure described by DBM leads to a larger gate leakage current.
Two SiO_2/Si interface structures,which are described by the double bonded model（DBM） and the bridge oxygen model（BOM）,have been theoretically studied via first-principle calculations.First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM.Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO_2/Si interface structure described by DBM leads to a larger gate leakage current.
