A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I-V characteristics of a barrier-type thyristor
A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I-V characteristics of a barrier-type thyristor
摘要
A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the I-V characteristics of a barrier-type thyristor（BTH） is put forward.The measuring principle and calculation method are given.The BTH samples are experimentally measured and the results are analyzed in detail.
A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the I-V characteristics of a barrier-type thyristor（BTH） is put forward.The measuring principle and calculation method are given.The BTH samples are experimentally measured and the results are analyzed in detail.
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