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Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs
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摘要 For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator(DMG SSOI) MOSFETs is developed.We investigate the improved short channel effect(SCE),hot carrier effect(HCE),drain-induced barrier-lowering(DIBL) and carrier transport efficiency for the novel structure MOSFET.The analytical model takes into account the effects of different metal gate lengths,work functions,the drain bias and Ge mole fraction in the relaxed SiGe buffer.The surface potential in the channel region exhibits a step potential,which can suppress SCE,HCE and DIBL.Also,strained-Si and SOI structure can improve the carrier transport efficiency,with strained-Si being particularly effective.Further, the threshold voltage model correctly predicts a"rollup"in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer.The validity of the two-dimensional analytical model is verified using numerical simulations. For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator(DMG SSOI) MOSFETs is developed.We investigate the improved short channel effect(SCE),hot carrier effect(HCE),drain-induced barrier-lowering(DIBL) and carrier transport efficiency for the novel structure MOSFET.The analytical model takes into account the effects of different metal gate lengths,work functions,the drain bias and Ge mole fraction in the relaxed SiGe buffer.The surface potential in the channel region exhibits a step potential,which can suppress SCE,HCE and DIBL.Also,strained-Si and SOI structure can improve the carrier transport efficiency,with strained-Si being particularly effective.Further, the threshold voltage model correctly predicts a"rollup"in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer.The validity of the two-dimensional analytical model is verified using numerical simulations.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第8期78-83,共6页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005) the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China Program(No.708083) the Specialized Research Fund for the Doctoral Program of Higher Education,China(No.200807010010).
关键词 SOI MOSFETs STRAINED-SI dual-material gate short channel effect hot carrier effect the drain-induced barrier-lowering two-dimensional model SOI MOSFETs strained-Si dual-material gate short channel effect hot carrier effect the drain-induced barrier-lowering two-dimensional model
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参考文献20

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