摘要
We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP_2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%（300 suns,AM1.5d） for the optimal structure parameter（1550 nm GaInP top and 5500 nm GaInAs bottom）,showing promising application prospects due to its acceptable lattice-mismatch（0.43%） to the GaAs substrate.
We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP_2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%（300 suns,AM1.5d） for the optimal structure parameter（1550 nm GaInP top and 5500 nm GaInAs bottom）,showing promising application prospects due to its acceptable lattice-mismatch（0.43%） to the GaAs substrate.
基金
Project supported by the State Key Development Program for Basic Research of China(No.2010CB933800).
