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激活能测试装置设计及微晶硅薄膜激活能测试 被引量：2

The design of activation energy measurement equipment and measurement of activation energy of microcrystalline silicon thin films
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摘要 为了分析微晶硅薄膜的本征特性,设计了激活能测试装置。测试装置包括测试平台、真空系统和加热控制系统。同时给出激活能计算方法,并对不同电压、不同取点个数对激活能测试的影响进行分析。分析结果表明,不同测试电压对激活能测试结果影响很小,不同取点个数计算的激活能差别也很小。 Activation energy measurement equipment were designed to analysis the intrinsic property of microcrystalline silicon film.The equipment included the measurement platform,the vacuum system and heating control system of equipment.The computation method of activation energy was also put forward.The effect of different voltages and different dot numbers on the activation energy measuring were analyzed.The result showed that both different voltage and different dot numbers have little effect on the activation energy result.
作者 陈庆东 王俊平 张宇翔 卢景霄
机构地区 滨州学院物理与电子科学系 郑州大学材料物理教育部重点实验室
出处 《山东大学学报（工学版）》 CAS 北大核心 2010年第4期149-152,共4页 Journal of Shandong University（Engineering Science）
基金 滨州学院青年人才创新工程科研基金资助项目(BZXYQNLG200821)
关键词 微晶硅 激活能 测试装置 microcrystalline silicon activation energy measurement equipment
分类号 TN304.12 [电子电信—物理电子学]
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参考文献7

  • 1YAN B J, YUE G Z, YANG J, et al. Hydrogenated microcrystalline silicon single-junction and multi-junction solar cells[ J ]. Mater Res Soc Symp Proc, 2003, 762: A4. 1. 1-A4. 1.12.
  • 2YAMAMOTO K, NAKAJIMA A, YOSHIMI M, et al. A high efficiency thin film silicon solar cell and module[ J ]. Solar Energy, 2004, 77 (6) :939-949.
  • 3KLEIN S, REPMANN T, BRAMMER T. Microcrystalline silicon films and solar cells deposited by PECVD and HWCVD[ J]. Solar Energy, 2004, 77(6) :893-908.
  • 4VAN VEEN M K, VANDER WERF C H M, Rath J K, et al. Incorporation of amorphous and microcrystalline silicon in n-i-p solar cells[J]. Thin Solid Films, 2003, 430 (1/2) :216-219.
  • 5SHAH A, VALLAT-SAUVAIN E, TORRES P, et al. Intrinsic microcrystalline silicon ( uc-Si : H) deposited by VHF-GD (very high frequency-glow discharge ):a new material for photovoltaic and optoelectronics [ J ]. Mater Sci Eng B, 2000(69/70) :219-226.
  • 6PRASAD K, FINGER F, DUBAIL S, et al. Deposition of phosphorus doped microcrystalline silicon below 170 ℃ at 70 MHz [ J]. J Non-Cryst Solids, 1991, (137/138) : 681-685.
  • 7ZHAO Ying,ZHANG Xiaodan, ZHU Feng, et al. Fabrication of high efficiency a-Si:H/uc-Si:H tandem solar cell modules [ C ]//15^th International Photovoltaic Science and Engineering Conferences ( PVSEC-15 ). Beijing: CERS, 2005:65-67.

同被引文献22

  • 1CASADY J B, JOHNSON R W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temper- ature applications: a review[J]. Solid-State Electronics, 1996, 39(10) : 1409.
  • 2HENRY A, KORDINA O, HALLIN C, et al. Photoluminescence determination of the nitrogen doping concentra- tion in 6H--SiC [ J ]. Applied Physics Letters, 1994, 65 (19) :2457-2459.
  • 3YAGUCHI H, NARITA K, HIJIKATA Y. Spatial mapping of the carrier concentration and mobility in SiC wafers by micro Fourier transform infrared spectroscopy [ J ]. Materials Science Forum, 2002, 621 ( 3 ) : 89-93.
  • 4NAKASHIMA S, HARIMA H. Spectroscopic analysis of electrical properties in polar semiconductors with over- damped plasmons [ J]. Applied Physics Letters, 2004, 95 ( 7 ) :3541-3546.
  • 5SHAFFER P T B. A review of the structure of silicon carbide [ J ]. Acta Crystallographica, 1969, B25 (3) :477.
  • 6SUNKARI S, MZAAOLA M S, MAZZLOLA J P. Investigation of longitudinal-opfical-phonon plasmon-coupled mode in SiC epitaxial film using Fourier transform infrared reflection[J]. Journal of Electronic Materials, 2005, 34 (4) :320-323.
  • 7NEYRET B, FERRO G, JUILLAGUET S. Optical investigation of residual doping species in 6H-and 4H-SiC layers grown by chemical vapor deposition[J].Materials Science and Engineering, 1999, B61-62:253-258.
  • 8STIASNY T, HELBIG R. Thermoluminescence and related electronic processes of 4H/6H--SiC[J].Physica Status Solidi (a) Applications and Materials Science, 1997, 162 ( 1 ) :239-249.
  • 9LIMPIJUMNONG S, LAMBRECHT W R L, RASHKEEV S N et al. Optical-absorption bands in the 1-3 eV range in n-type SiC polytypes [J]. Physical Review B, 1998, 57 (19) :12017-12022.
  • 10SRIDHARA S G, BAI S, SHIGILTCHOFF O, et al. Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC [J].Materials Science Forum, 2000, 338-342:551-554.

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山东大学学报（工学版）
2010年 第4期

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