摘要
采用溶胶-凝胶工艺制备了Bi4-xLaxTi3O12和Bi4Ti3-yNbyO12铁电薄膜,研究了La、Nb掺杂对薄膜介电性能和C-V特性的影响。研究表明,在x<0.75、y<0.06范围内,随La、Nb掺杂量的增加,Bi4-xLaxTi3O12和Bi4Ti3-yNbyO12薄膜的介电常数和C-V特性曲线回滞窗口增大,介电损耗和漏电流密度减小。x>0.5时,Bi4-xLaxTi3O12薄膜可获得大于1.8V的C-V回滞窗口,且经1010极化开关后其回滞窗口的减小未超过6%;而Nb掺杂对增大Bi4Ti3-yNbyO12薄膜C-V回滞窗口的作用更加明显,但经1010极化开关后,其回滞窗口的减小较为明显,并出现一定平移。
Bi4-xLaxTi3O12 and Bi4Ti3-yNbyO12 ferroelectric thin films were fabricated by sol-gel technique. The effect of La and Nb doping on the dielectric properties and C-V characteristics of Bi4 -xLaxTi3O12 and Bi4Ti3 -yNbyO12 thin films were investigated. As the La ( x 0. 75) or Nb ( y 0. 06) increasing,the C-V hysteresis window and the dielectric constant of Bi4 -x LaxTi3O12 and Bi4Ti3 -y NbyO12 thin films increase,meanwhile the tan δ and leak current density decrease. The C-V hysteresis window of Bi4 -xLaxTi3O12 thin films is larger than 1. 8 V when x 0. 5 and decrease less than 6% after 1010 switching. Doping of Nb have great influence on C-V hysteresis window of Bi4Ti3 -yNbyO12 thin films,but smaller C-V hysteresis window with a shift can be observed after 1010 switching.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第4期1014-1018,共5页
Journal of Synthetic Crystals
基金
教育部科学技术研究重点项目(No.208109)
广西自然科学基金资助项目(桂科自0832247)