交换偏置增强反铁磁FeMn薄膜稳定性研究

Study on Exchange Bias Enhanced Stabilization of Antiferromagnetic FeMn Thin Film

采用磁控溅射方法制备了基片/Ta/NiFe(Ⅰ)/FeMn(Ⅰ)/NiFe(Ⅰ)/FeMn(Ⅰ)/Ta系列样品。实验发现,如果只是NiFe/FeMn交换偏置双层膜,在FeMn厚度大于3.5nm时才产生交换偏置。由于与NiFe之间的交换作用,即使2nm厚的FeMn(Ⅰ)也可以对NiFe(Ⅰ)产生交换偏置。结果表明,可以通过铁磁/反铁磁的交换耦合作用来增强反铁磁FeMn的稳定性。

A series of substrate//Ta/NiFe（Ⅰ）/FeMn（Ⅰ）/ NiFe（Ⅱ）/FeMn（Ⅱ）/Ta films have been synthesized by magnetron sputtering.It was found that,for NiFe/FeMn bilayers,only those with FeMn thickness of larger than 3.5nm presented exchange bias.However,by exchanging couple with NiFe,the FeMn（Ⅰ） with thickness of only 2nm can generate exchange bias to NiFe（Ⅰ）.This result suggests that the exchange bias enhance the stabilization of antiferromagnetic FeMn.