耐高温耐辐射的碳化硅半导体探测器

SiC Semiconductor Detector with Temperature and Radiation Hardness

在核反应堆堆芯、高能物理实验及外太空等高温高压以及强辐射环境中进行辐射监测时,探测器的耐高温和耐辐照性能备受关注。随着材料技术的发展,关于二元半导体碳化硅(SiC)和氮化镓(GaN)作为辐射探测器的研究已经取得良好进展。尤其是SiC晶体,因其禁带宽度大、晶体原子离位能大以及电子空穴迁移率高等特点,最有希望在将来代替Si作为耐高温耐辐照半导体探测器的材料。

The temperature and radiation tolerance of detectors, used in reactor core, high energy experiment and outer space, is the focus of everyone＇s attention. SiC and GaN radiation detectors are presently developed for use in these conditions. Due to its wide bandgap, high displacement energy and electron mobility, SiC is currently the most promising alternative material to silicon for temperature and radiation hard detector devices, in future.