摘要
用真空电子束蒸镀的方法制备氧化铟锡(indiumtin oxide,ITO)薄膜,制作了以300nmITO为窗口层的新型AlGaInP红光LED。在氮气环境下,对LED样品进行了40s快速热退火处理。随着退火温度增加,LED的光强先上升后下降,电压先下降后上升,并且两者都在435℃达到最优值。通过霍尔测试研究退火对ITO薄膜电学特性的影响,发现这是由于ITO在经过435℃退火后,电阻率最小,载流子浓度最大,因而减小了ITO的体电阻和p型欧姆接触电阻,降低了LED工作电压,同时增加了ITO做为电流扩展层的电流扩展效果,提高了LED光强。
Indium tin oxide（ITO）film is fabricated with vacuum electron-beam evaporation.A novel AlGaInP light-emitting diode（LED）with a 300 nm thickness transparent conducting indium tin oxide film as window layer is fabricated.LED chip was annealed rapidly in N2 atmosphere for 40 s.As the rapid thermal annealing（RTA）temperature increases,the luminous intensity increases at the beginning and then decreases while the voltage first decreases and then increases.And the optimal annealing temperature for the luminous intensity and voltage is 435 ℃.The result from Hall test of ITO film showed that the carrier concentration is the highest and the resistivity is the lowest when ITO is annealed in a RTA system at 435 ℃.The forward voltage of LED decreases due to the resistance of ITO and the Ohmic contact resistance decreased and the light output increases due to the better current-spreading effect of ITO as current-spreading layer
出处
《光学学报》
EI
CAS
CSCD
北大核心
2010年第8期2401-2405,共5页
Acta Optica Sinica
基金
国家863计划(2008AA03Z402
2009AA03A1A3)资助课题
关键词
光学器件
发光二极管
快速热退火
霍尔测试
氧化铟锡
optical devices
light-emitting diode（LED）
rapid thermal annealing（RAT）
Hall test
indium tin oxide（ITO）
