APCVD法SiH_4-NH_3-CO_2系统制备氧氮玻璃薄膜的研究

STUDY ON THE PREPARATION OF GLASS OXYNITRIDE THIN FILMS FROM SiH4-NH3-CO2 SYSTEM VIA APCVD

在６６０℃下以ＳｉＨ４－ＮＨ３－ＣＯ２作为反应气体利用常压ＣＶＤ（ＡＰＣＶＤ）设备沉积得到了氧氮玻璃薄膜．此温度比文献报道的ＡＰＣＶＤ法低２００℃以上，有效地降低了沉积温度．实验发现ＮＨ３中水汽对沉积反应的显著影响．初步研究表明：运用ＡＰＣＶＤ法将这种薄膜应用于普通钠钙硅玻璃的表面改性。

Glass oxynitride thin films have attractive prospects in the field of surface modification of materials because these films have excellent mechanical properties and stability. Glass oxynitride thin films are prepared from SiH4-NH3-CO2 via atmospheric pressure chemical vapor deposition(APCVD)at 660 , which decreases the temperature of APCVD effectively reported in the references by more than 200 . It is found in the experiment that there is the obvious effect of steam in NH3 on the reaction of SiH4 and NH3. We applied these films via APCVD to the surface modification of silicate glass, and the results indicate that the surface hardness of silicate glass with oxynitride films is higher than that of annealed silicate glass by more than 50%.