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硅抛光片表面质量测试技术综述 被引量:2

Review of Measurement Technology on Surface Quality for Silicon Polished Wafers
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摘要 随着硅抛光片尺寸逐渐增大,硅抛光片表面质量测试逐步被人们所关注。表面金属离子含量以及表面颗粒度成为衡量硅抛光片表面质量的重要指标,对表面金属离子含量以及表面颗粒度的测试原理以及设备进展进行了介绍。 The measurement technology for silicon polished wafers had been widely concerned as the diameter of silicon polished wafers gradually enlarged.Surface metal ion concentration and surface particle level had become the important parameters which appraised the surface quality of the silicon polished wafers.The measurement principle and equipment progress were introduced in the article.
出处 《电子工业专用设备》 2010年第7期9-10,38,共3页 Equipment for Electronic Products Manufacturing
关键词 表面颗粒度 全反射荧光谱 Silicon Surface Particle Level TXRF
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  • 1刘传军,赵权,刘春香,杨洪星.硅片清洗原理与方法综述[J].半导体情报,2000,37(2):30-36. 被引量:27
  • 2Improving Tool Design and Performance with Precision Wafer Surface Scan[EB/OL].http://www.balazs.com/file/otherelement/pj/app0456%20automated%20vpd%20icp-ms%20for%20tools61601.pdf.
  • 3松川.半导体设备中的粒子沾污[J].微电子技术,1995,23(2):58-65. 被引量:1
  • 4刘红艳,万关良,闫志瑞.硅片清洗及最新发展[J].中国稀土学报,2003,21(z1):144-149. 被引量:28
  • 5John J Rosato,M.Rao Yalamanchili,Evanson G.Baiya,et.al.Implementing a fully integrated IPA drying processin the fab environment[J].Micromagzine,2003:1-6.
  • 6Y.Yoneda,T.Horiuchi.Optical flats for use in X-ray Spectrochemical Microanalysis[J].Rev.Sci.Instrum,1971,42:1069-1070.
  • 7P.Pianetta,K.Baur and S.Brennan,Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces[J].Superficies yVacio,1999,9:17-21.
  • 8Meredith Beebe,Scott Guisinger,Syotaro Kawai,A New Application of Vapor Phase Decomposition for Thermal Oxides,Technos公司资料.
  • 9杨洪星,刘晓伟,陈亚楠,武永超,赵权.激光技术在半导体行业中的应用[J].电子工业专用设备,2010,39(2):10-13. 被引量:6

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