基于氧化铝缓冲层的Si基ZnO薄膜研究

Study on Si-based ZnO Thin Film Grown on Aluminum Oxide Buffer Layer

高质量的ZnO薄膜通常生长在蓝宝石等晶格匹配好的衬底上,在晶格失配较大的Si衬底上很难得到高质量的ZnO薄膜,而在Si衬底上制备高质量的ZnO薄膜更具有广泛应用前景。本文采用反应磁控溅射的方法,在Si衬底上,通过引入Al2O3缓冲层,在不同氧气和氩气比例下制备了高质量的ZnO薄膜。研究了引入Al2O3缓冲层后,对ZnO薄膜结构和光学特性的影响。发现对于不同氧气和氩气比例下生长的ZnO薄膜样品,其(002)方向的X射线衍射峰的半峰宽(FWHM)明显减小,光致发光谱中紫外发光与可见发光峰值强度比明显增强。表明引入Al2O3缓冲层后,ZnO薄膜的结构和光学特性得到了很大改善,从而为在Si衬底上制备高质量ZnO薄膜提供了参考。

High quality ZnO thin films are often grown on lattice-matched substrate,for example,sapphire substrate.It is difficult to grow high quality of ZnO thin film on Si substrate due to large lattice mismatch.However,ZnO thin films grown on Si substrate will have more applications.In this paper,introduced a layer of Al2O3 buffer layer,the high quality ZnO thin film can be grown on Si substrate by using reactive radio-frequency magnetron sputtering method under different O/Ar ratios.The influences of Al2O3 buffer layer on the structure and optical properties of ZnO thin films are mainly investigated.It is found that the full-width at the half maximum of （002） X-ray diffraction peak from ZnO thin film obviously becomes smaller,the intensity ratio of ultraviolet to visible in the luminescent spectrum （PL） increases for ZnO thin films grown under different O/Ar ratios.It indicates that the structure and optical properties of ZnO thin film can be greatly improved by introducing Al2O3 buffer layer.Thus,this work is helpful to the fabrication of high quality ZnO thin film on Si substrate.