计算机硬盘基片的化学机械清洗技术研究

Chemical Mechanical Cleaning of Computer Hard Disk Substrate

目前,CMP技术对计算机硬盘基片(盘片)进行抛光,盘片表面粗糙度达到原子级平整,抛光后表面的清洗质量直接关系到CMP最终技术水平的高低。采用静态浸泡实验以及浸泡、擦洗、超声清洗实验,结合一系列的表面微观分析,研究了盘片CMP后清洗过程中的化学作用、机械作用以及清洗剂、清洗方式等物理化学要素对CMP后清洗效果的影响。结果表明,CMP后清洗是一种机械作用、化学作用等综合作用的过程。采用优化的清洗工艺及清洗剂,得到了低腐蚀、高洁净、平整的硬盘基片表面。

At present,the surface of computer hard disk substrate reaches atom-scale planarization after CMP.Post-CMP cleaning is one of the key factors influencing the CMP performances.The influences of chemical effect,mechanical effect,detergent and cleaning methods on the post-CMP cleaning performances were investigated by using immersion corrosion test,cleaning tests（immersion,scrubing and ultrasonic）and following microcosmic analysis on disk surfaces.The results show that post-CMP cleaning is a chemical-mechanical cleaning process which includes chemical and mechanical effects.By using the immersion-scrubbing-ultrasonic cleaning method and the prepared cleaning solution,a lower corrosive,ultra-clean and smooth hard disk substrate surface was obtained.