RPCVD生长SiGe薄膜及其性能研究

Investigation on SiGe Film Growth by RPCVD and Its Performance

利用应用材料公司外延设备,在Si（001）衬底上,通过RPCVD方式生长出完全应变、无位错的SiGe外延层。通过X射线衍射和原子力显微镜测试技术,得到了外延层Ge摩尔分数、外延层厚度、生长速率以及表面粗糙度等参数,研究了运用RPCVD方法制备的应变SiGe外延层的生长特性以及薄膜特性。结果表明,在660℃所生长的薄膜,其XRD图像均出现了Pendelossung条纹,表明薄膜质量较好。Ge摩尔分数高达16.5%。薄膜表面粗糙度RMS在0.3~0.6 nm。

The fully strained SiGe epitaxial film was grown on Si（001）substrate by reduced pressure chemical vapor deposition（RPCVD） using the equipment of Applied Materials.The Ge concentration,surface thickness and growth rate of the epitaxial film were estimated with X-ray diffraction.The surface roughness was investigated by atomic force microscopy.The growing and the film performance of strained SiGe were studied.The results show that there are Pendelossung stripes on the SiGe peak,which suggests that the SiGe base layer is of good quality.The Ge concentration is up to 16.5%.The surface root mean square roughness is 0.3～0.6 nm.