摘要
采用0.25μmGaAs FET芯片工艺成功制作了X波段4位数控移相器MMIC,对该数控移相器MMIC集成电路的设计、工艺制作过程做了阐述,并给出了实际测试参数。电路设计采用了高低通滤波器式移相器拓扑,串联FET与并联FET组合的电路方式。结果表明,在7.5~8.7 GHz频段内插入损耗≤7 dB,电压驻波比≤1.8∶1,开关时间≤30 ns,移相精度22.5°±2°,45°±3°,90°±3°,180°±3°,所有状态均方根移相误差≤5,控制电压-5 V或0 V。
An X-band 4-bit numerical control phase shifter MMIC was successfully fabricated using 0.25 μm GaAs FET chip process.The design and fabrication procedures are illustrated,and the pratical test results are given.The topology of the phase shifter employed high-pass and low-pass filters mode,and the circuit combined series FETs and parallel FETs together.The results show that at 7.5-8.7 GHz,the insertion loss is ≤7 dB,the voltage standing wave ratio(VSWR) is ≤1.8∶1,the switching time is ≤30 ns,and the phase shift precision is 22.5°±2°,45°±3°,90°±3° and 180°±3°.At all the conditions,the root mean square(RMS) phase shift error is ≤5,and the control voltage is-5 V或0 V.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第8期831-833,851,共4页
Semiconductor Technology
关键词
X波段
数控移相器
插入损耗
移相精度
X-band
digitally controlled phase shifter
insertion loss
phase shift precision