期刊文献+

X波段4位数控移相器MMIC研究 被引量:4

Research on X-Band 4-Bit Digital Phase Shifter MMIC
下载PDF
导出
摘要 采用0.25μmGaAs FET芯片工艺成功制作了X波段4位数控移相器MMIC,对该数控移相器MMIC集成电路的设计、工艺制作过程做了阐述,并给出了实际测试参数。电路设计采用了高低通滤波器式移相器拓扑,串联FET与并联FET组合的电路方式。结果表明,在7.5~8.7 GHz频段内插入损耗≤7 dB,电压驻波比≤1.8∶1,开关时间≤30 ns,移相精度22.5°±2°,45°±3°,90°±3°,180°±3°,所有状态均方根移相误差≤5,控制电压-5 V或0 V。 An X-band 4-bit numerical control phase shifter MMIC was successfully fabricated using 0.25 μm GaAs FET chip process.The design and fabrication procedures are illustrated,and the pratical test results are given.The topology of the phase shifter employed high-pass and low-pass filters mode,and the circuit combined series FETs and parallel FETs together.The results show that at 7.5-8.7 GHz,the insertion loss is ≤7 dB,the voltage standing wave ratio(VSWR) is ≤1.8∶1,the switching time is ≤30 ns,and the phase shift precision is 22.5°±2°,45°±3°,90°±3° and 180°±3°.At all the conditions,the root mean square(RMS) phase shift error is ≤5,and the control voltage is-5 V或0 V.
出处 《半导体技术》 CAS CSCD 北大核心 2010年第8期831-833,851,共4页 Semiconductor Technology
关键词 X波段 数控移相器 插入损耗 移相精度 X-band digitally controlled phase shifter insertion loss phase shift precision
  • 相关文献

参考文献3

  • 1JIN Z,OPTIZ S A M.Design and performance of a new digitalshifter at X-band[J].IEEE Microw Wireless Compon Lett,2004,14 (9):428 -430.
  • 2中国集成电路大全编委会.微波集成电路[M].北京:国防工业出版社,1995..
  • 3CURTICE W R.A MESFET model for use in the design of GaAs integated circuits[J].IEEE Trans on MIT,1980,28(5):445-448.

共引文献10

同被引文献20

  • 1周志鹏,杜小辉,代合鹏.GaAs单片移相器设计[J].微波学报,2005,21(4):54-57. 被引量:5
  • 2Reinhold Ludwig,Pavel Bretchko.射频电路设计--理论与应用[M].北京:电子工业出版社,2005.
  • 3Masatake Hangai, Morishige Hieda. S- and C-Band Ultra-Compact Phase Shifters Based on All-Pass Networks[ J]. IEEE Transactions on Microwave Theory and Techniques ,2010,58 (1) :41-47.
  • 4Inder J Bahl, David Conway. L- and S-Band Compact Octave Bandwidth 4-bit MMIC Phase Shifters [ J ]. IEEE Transactions on Microwave Theory and Techniques,2008,56(2) :293-299.
  • 5Hettak K, Ross T, Gratton D. A New Type of GaN HEMT Based High Power High-Pass Low-Pass Phase Shifter at X Band [ J ]. Microwave Symposium Digest ,2012 : 10-12.
  • 6Xinyi Tang, Koen Mouthaan. Design Considerations for Octave- Band Phase Shifters Using Discrete Components [ J ]. IEEE Tang, 2010,58(12) :3459-3466.
  • 7Hettak K, Ross T, Irfan N, et al. High-Power Broadband GaN HEMT SPST/SPDT Switches Based on Resonance lnductors and Shunt-Stacked Transistors [ J ]. Proceedings of the 7th European Microwave Integrated Circuits Conference,2012:215-218.
  • 8Masatake Hangai. An X-Band 50% Bandwidth High-Power GaN HEMT T/R Switch [ J ]. Proceedings of Asia-Pacific Microwave Conference, 2010 : 135-138.
  • 9Sanghoon Sim, Laurence Jean. A Compact X-Band Bi-Directional Phased-Array T/R Chipset in 0. 13 trm CMOS Technology [ J]. IEEE Transactions on Microwave Theory and Techniques ,2013,61 ( 1 ) :562-569.
  • 10Morton M A. 5 bit, Silicon-Based, X-Band Phase Shifter Using a Hybrid pi/t High-Pass/Low-Pass Topology [ J ]. IET Mierow Antennas Propag,2008,2( 1 ) :19.

引证文献4

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部