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辐射效应对半导体器件的影响及加固技术 被引量:6

The Radiation Effects and Hardened Technologies of Semiconductor Device
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摘要 与其他半导体器件相比,CMOS集成电路具有功耗小、噪声容限大等优点,对于对重量、体积、能源消耗都有严格要求的卫星和宇宙飞船来说,CMOS集成电路是优先选择的器件种类。随着半导体器件的等比例缩小,辐射效应对器件的影响也在跟着变化。这些影响包括:栅氧化层厚度、栅长的减小、横向非均匀损伤、栅感应漏电流等方面。对于微电子器件的抗辐射加固,文章就微电子器件的应用场合、辐射环境的辐射因素和强度等,从微电子器件的制作材料、电路设计、器件结构、工艺等多方面进行加固考虑,针对各种应用环境提出加固方案。 To contrast with other device,CMOS has advantages on less power,noise martin.To satellites and spaceship are concerned,CMOS is the first choice.The radiation effect for semiconductor scaling was described.It is included:thickness of oxide of gate,scaling of gate,GIDL.Then,the radiation hardened of devices was introduced,in detail.For difference application,we give the difference ways to hardened.
作者 赵力 杨晓花
出处 《电子与封装》 2010年第8期31-36,共6页 Electronics & Packaging
关键词 微电子器件 辐射效应 抗辐射加固 MOS器件等比例缩小 microelectronic device radiation effect radiation hardened scaling of MOS device
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参考文献9

  • 1Walters M,Reisman A.Radiation-induced neutral electron trap generation in electrically biased insulated gate field effect transistor gate insulators[J].Electrochemist Soc.1991,138:2756-2762.
  • 2贺朝会,耿斌,何宝平,姚育娟,李永宏,彭宏论,林东生,周辉,陈雨生.大规模集成电路总剂量效应测试方法初探[J].物理学报,2004,53(1):194-199. 被引量:22
  • 3C.Claeys,E.Simoen.刘忠立译.先进半导体材料及器件的辐射效应[M].北京:国防工业出版社,2008.
  • 4Scarpulla J,Amram AL,et al.Gate size dependence of the radiation-produced changed in threshold voltage,mobility,and interface state density in bulk CMOS[J].IEEE Trans Nucl Sci.39:1990-1997.
  • 5Shaneyeflt MR,Fleetwood DM,et al.Effects of device scaling and geometry on MOS radiation hardness assurance[J].IEEE Trans Nucl Sci.40:1678-1685.
  • 6Chen W,Baiasinski A.Lateral distribution of radiation-induced damage in MOSFETs[J].IEEE Trans Nucl Sci,1991,38:1124-1129.
  • 7Balasinski A.Ionizing radiation damage near CMOS transistor channel edges.[J] IEEE Trans Nucl Sci,1992,39:1998-2003.
  • 8BaiasinskiA.Impact of radiation-induced nonuniform damage near MOSFET junctions[J].IEEE Trans Nucl Sci.1993,40:1289-1296.
  • 9Pantelakis DC,Hemmenway DF,et al.Freeze-out characteristics of radiation hardened n+polysilicon gate CMOS transistors[J].IEEE Trans Nucl Sci.1991,38:1289-1296.

二级参考文献10

  • 1Nguyen D N et al 1999 IEEE Trans. on Nucl. Sci. 46 1744
  • 2Lelis A J et al 1996 IEEE Trans. on Nucl. Sci. 43 3103
  • 3Lu T et al 2001 Chin. Phys. 10 145
  • 4He C H et al 2002 Nucl. Elec. Dec. Tech. 22 344(in Chinese)[贺朝会等 2002 核电子学与探测技术 22 344]
  • 5He B P et al 2000 Atomic Energy Sci. Tech. 34 334(in Chinese)[何宝平等 2000 原子能科学技术 34 334]
  • 6He C H et al 2000 Nucl. Elec. Dec. Tech. 20 253(in Chinese)[贺朝会等 2000核电子学与探测技术 20 253]
  • 7郭红霞 等.物理学报,2002,51:2315-2315.
  • 8王晓强 等.物理学报,2002,51:1094-1094.
  • 9张廷庆 等.物理学报,2001,50:2434-2434.
  • 10王剑屏 等.物理学报,2000,49:1331-1331.

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二级引证文献21

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