铒离子注入6H-SiC的横向离散研究

Investigation of the lateral spread of Er ions implanted in 6H-SiC

利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布、射程离散和横向离散规律等是很重要的.用400keV能量的铒(Er)离子分别与样品表面法线方向成0°,45°和60°倾角注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×1015cm-2的400keVEr离子注入6H-SiC晶体的横向离散.测出的实验值与TRIM'98和SRIM2006得到的理论模拟值进行了比较,发现实验值跟TRIM'98和SRIM2006计算的理论值都符合较好,TRIM'98计算的理论值与试验值符合得更好一些.

It is very important to consider the distribution of range,range straggling and lateral spread of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. Er ions with energy of 400 keV were implanted in 6H-SiC crystal samples under the angles of 0°,45° and 60°,respectively. The lateral spread of Er ions with dose of 5 × 1015 cm -2 at energy of 400 keV implanted in 6H-SiC crystal were measured by Rutherford backscattering technique. The measured lateral spread is compared with TRIM＇98 and SRIM2006 codes prediction. It is seen that the experimental lateral spread well justifies the theoretical values. The value from TRIM＇98 agrees somewhat better to the experimental data than the value obtained based on SRIM2006.