Pb(Zr_(0.3)Ti_(0.7))O_3铁电薄膜激光感生电压效应

Laser-induced voltage effect in Pb(Zr_(0.3)Ti_(0.7))O_3 ferroelectric thin film

采用脉冲激光沉积(PLD)技术在LaSrAlTaO3(LSATO),LaAlO3(LAO)和SrTiO3(STO)的单晶倾斜衬底上成功制备了Pb(Zr0.3Ti0.7)O3(PZT)薄膜,在三种倾斜衬底上生长的PZT薄膜中都首次发现了LIV效应.对PZT/LSATO薄膜在a,c轴两种不同取向择优生长下的LIV效应做了研究,发现在薄膜c轴取向择优生长的情况下,激光感生电压随着单脉冲激光能量的增加线性增大;而在a取向择优生长的情况下感生电压与激光能量并无明显变化规律,说明PZT薄膜上的LIV效应是原子层热电堆效应,Seebeck系数的各向异性起着重要作用.通过实现薄膜与传输线的阻抗匹配,LITV信号的响应时间得到了很好的改善,上升沿时间由原来的60ns下降到了26ns,半高宽由260ns下降到了38ns.

Pb（Zr0. 3Ti0. 7） O3 （PZT） thin films have been grown by pulsed laser deposition （PLD） on LaSrAlTaO3 （LSATO）, LaAlO3 （LAO） and SrTiO3（STO） single crystal vicinal cut substrates. Laser-induced voltage（LIV） effect was also found in PZT thin films grown on the three vicinal cut substrates for the first time. LIV signals increased with the single-pulse laser energy following the linear relation in case of c-axis orientation of thin film; but this linear relation was not followed obviously in case of a-axis orientation of thin film. This result shows that the LIV effect in PZT thin film is the atomic layer thermopile effect,in the which anisotropy of Seebeck coefficient plays an important role. Through realizing impedance-matching of thin films and transmission line,LITV signal response time has been optimized,the time of rising edge dropped from 60 ns to 26 ns,the full width at half maximum dropped from 260 ns to 38 ns.