非均一相互作用能对超薄膜生长影响的Monte Carlo模拟研究

Monte Carlo simulation of influence of inhomogeneous interaction energy on thin film growth

利用Monte Carlo(MC)模拟技术研究了非均一的吸附原子与基底相互作用能在一定的生长条件下对超薄膜生长过程的影响.非均一相互作用能是由基底表面原子在垂直和水平方向上实际位置与理想晶格原子位置的偏差所造成.本文用高斯分布来表示这种非均一相互作用能.模拟结果表明:非均一相互作用能对超薄膜的生长过程及薄膜的形貌有显著的影响.这种影响同时受到生长条件的限制,在中等温度时相互作用能的非均一性对岛的个数、平均大小的影响最显著;温度的增加在一定程度上可抵御相互作用能的非均一性对薄膜生长的影响.

The influence of inhomogeneous interaction energy between deposited atoms and substrate atoms on island film growth is investigated by Monte Carlo simulation on a triangular lattice substrate. The Gaussian distribution is employed to describe the inhomogeneity of interaction energy. The results illustrate that the influence of inhomogeneous interaction energy on the growth of thin film is related to the degree of the inhomogeneity and the experimental conditions （such as substrate temperature）. At medium temperature the inhomogeneity of interaction energy has notable influence on the island number and the island size. Increasing in temperature could counteract the influence of the inhomogeneity of interaction energy.