双量子阱结构OLED效率和电流的磁效应

The role of magnetic fields on the efficiency of OLED of double quantum well structures

通过结构为ITO/NPB(60nm)/Alq3∶1wt%rubrene(20nm)/Alq3(3nm)/Alq3∶1wt%rubrene(20nm)/Alq3(20nm)/LiF/Al的双量子阱的黄色有机电致发光器件,研究了不同磁场强度下的发光效率和电流变化特性.研究结果表明该器件的电流是随着磁场强度的增加而单调下降的,显示了器件的电阻是随着磁场强度的增加而增加的.同时也得到了该结构有机发光器件的发光效率的磁效应.当外加磁场强度小于20mT时,器件的电流效率变化率是随着磁场强度的增加而增加的,最大达到9.13%.当外加磁场强度大于20mT时,器件的电流效率变化率是随着磁场强度的增加而减少的.

The organic light emitting diodes with the structure of ITO/NPB（60 nm） /Alq3 ∶ Rubrene（1wt% ,20 nm）/Alq3 （3 nm） /Alq3：Rubrene（1wt% ,20 nm）/ Alq3 （20 nm） /LiF /Al,which have multiple quantum well structures （MQW）, were fabricated and the magnetic field effects on the efficiency and current of the OLEDs were measured. The experiment showed that the current decreased monotoniocally,i. e. the resistance of the device increased under the magnetic field. At the same time,the magnetic field effect on efficiency was achieved. The changing ratio of efficiency increased 9. 13% maximally when the magnetic field was below 20 mT. The changing ratio of efficiency decreased with the magnetic field increasing when the magnetic field was higher than 20 mT.