摘要
The interface phonon-polaritons in quantum well systems consisting of polar ternary mixed crystals are investi-gated. The numerical results of the interface phonon-polariton frequencies in the GaAs/AlxGa1-xAs, ZnSxSe1-x/ZnS, and ZnxCd1-xSe/ ZnSe quantum well systems are obtained and discussed. It is shown that there are six branches of interface phonon-polariton modes distributed in three bulk phonon-polariton forbidden bands in the systems. The electric fields of interface phonon polaritons are also presented and show the interface locality of the modes. The effects of the ＇two-mode＇ and ＇one-mode＇ behaviours of the ternary mixed crystals on the interface phonon-polariton modes are shown in the dispersion curves.
The interface phonon-polaritons in quantum well systems consisting of polar ternary mixed crystals are investi-gated. The numerical results of the interface phonon-polariton frequencies in the GaAs/AlxGa1-xAs, ZnSxSe1-x/ZnS, and ZnxCd1-xSe/ ZnSe quantum well systems are obtained and discussed. It is shown that there are six branches of interface phonon-polariton modes distributed in three bulk phonon-polariton forbidden bands in the systems. The electric fields of interface phonon polaritons are also presented and show the interface locality of the modes. The effects of the ＇two-mode＇ and ＇one-mode＇ behaviours of the ternary mixed crystals on the interface phonon-polariton modes are shown in the dispersion curves.
基金
supported partly by the National Natural Science Foundation of China (Grant Nos.10764003 and 10947179)
