摘要
This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.
This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.
基金
supported by Hi-Tech Research and Development Program of China (Grant Nos.2007AA05Z436 and 2009AA050602)
Science and Technology Support Project of Tianjin of China (Grant No.08ZCKFGX03500)
National Basic Research Program of China (Grant Nos.2006CB202602 and 2006CB202603)
National Natural Science Foundation of China (Grant No.60976051)
International Cooperation Project between China-Greece Government (Grant Nos.2006DFA62390 and 2009DFA62580)
Program for New Century Excellent Talents in University of China (Grant No.NCET-08-0295)
