摘要
An S-band erbium^doped fiber （EDF） amplifier based on a W-type EDF designed by ourselves is demonstrated by employing a two-stage double-pass configuration. The amplifier provides a bandwidth of 34 nm （1486-1520 nm） for the gain over 20dB. The maximal gain of 32.8dB is achieved at 1501 nm and the corresponding noise figure is 6.0 dB. The proposed amplifier has a promising foreground in extending the current network to the S band.
An S-band erbium^doped fiber （EDF） amplifier based on a W-type EDF designed by ourselves is demonstrated by employing a two-stage double-pass configuration. The amplifier provides a bandwidth of 34 nm （1486-1520 nm） for the gain over 20dB. The maximal gain of 32.8dB is achieved at 1501 nm and the corresponding noise figure is 6.0 dB. The proposed amplifier has a promising foreground in extending the current network to the S band.
基金
Supported by the National Natural Science Foundation of China under Grant No 60677014.
