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Fabrication, Structural and Magnetic Properties for Aligned MnBi

Fabrication, Structural and Magnetic Properties for Aligned MnBi
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摘要 MnBi compound is fabricated under a magnetic field of 1 T, and the c-axis of hexagonal MnBi crystal is aligned parallel to the magnetic field direction. The saturation magnetization Ms decreases with the increase of temperature. At temperatures below 20OK, the coercive field Hc is about 150Oe, while the coercive field Hc increases with temperature above 200K. From 200K to 300K, the remnant magnetization Mr and the Mr/Ms increase with the temperature. Below 200K, Mr and Mr/M8 reach roughly a constant value. However, there is an abnormal increase at 100 K in He, Mr and Mr/Ms, which comes from a spin-reorientation in MnBi. Magnetization results show the spin-reorientation for MnBi at about 91 K due to the variations of the anisotropy constants. MnBi compound is fabricated under a magnetic field of 1 T, and the c-axis of hexagonal MnBi crystal is aligned parallel to the magnetic field direction. The saturation magnetization Ms decreases with the increase of temperature. At temperatures below 20OK, the coercive field Hc is about 150Oe, while the coercive field Hc increases with temperature above 200K. From 200K to 300K, the remnant magnetization Mr and the Mr/Ms increase with the temperature. Below 200K, Mr and Mr/M8 reach roughly a constant value. However, there is an abnormal increase at 100 K in He, Mr and Mr/Ms, which comes from a spin-reorientation in MnBi. Magnetization results show the spin-reorientation for MnBi at about 91 K due to the variations of the anisotropy constants.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第9期199-202,共4页 中国物理快报(英文版)
基金 Supported by the Shanghai Rising-Star Program under Grant Nos 07QA14026 and 09QA1406300, the National Natural Science Foundation of China under Grant Nos 10804072 and 50703029, the Science and Technology Commission of Shanghai Municipality under Grant Nos 0952nm02700, 2009025, 08JC1410400 and 09dz1202500, and the Innovation Program of Shanghai Municipal Education Commission under Grant No 11ZZ168.
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