摘要
Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature Tp to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both Tp and Train under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7 /8Sr1/8MnO3.
Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature Tp to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both Tp and Train under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7 /8Sr1/8MnO3.
基金
Supported by the National Basic Research Program of China under Grant No 2007CB925002, and the National Natural Science Foundation of China under Grant Nos 10774146, 10904147 and 10974205.
