DC磁控溅射制备的TiN_x薄膜组分及性能分析

COMPOSITION AND PROPERTIES OF TiNx THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING

利用DC磁控溅射法在p-Si(111)衬底上制备了TiNx薄膜.利用X射线能谱仪(EDX)、X射线衍射(XRD)、紫外/可见分光光度计、四探针电阻率测试仪等分析了薄膜的组分、结构和光电特性.结果表明,薄膜中N/Ti原子比接近于1;衬底温度对薄膜的择优取向影响显著,240℃附近是TiNx薄膜结晶择优取向由(111)向(200)转变的临界点;薄膜在近红外波段平均反射率随衬底温度的升高,先增大后减小;薄膜的电阻率随着衬底温度的升高而显著降低.

TiNx thin films were deposited on p-Si（ 111 ） substrate by DC magnetron reactive sputtering method. The composition, structure and photoelectric properties of the films were studied by using energy dispersive x-ray spectroscopy （EDX）, x-ray diffraction （XRD）, UV-visible spectrophotometer, and four-probe resistivity meter. The results show that the atomic ratio N/Ti of the prepared TiN, thin films is close to 1. The preferred orientation of TiNx thin films is obviously influenced by the substrate temperature and there is a transition of the preferred orientation from （ 111 ） to （200） when the substrate temperature is about 240℃. The average reflectivity of the films in the near infrared band first increases and then decreases with the increase of the substrate temperature, while the resistivity of TiNx thin films decreases rapidly.