期刊文献+

时效对BGA无铅焊点抗剪强度和断裂模式的影响

下载PDF
导出
摘要 测试了BGA(球栅阵列)板级封装Sn-3.0Ag-0.5Cu焊点经时效后的抗剪强度,并采用三维超景深显微镜对全部试样焊点的断裂模式进行统计分析。对比研究不同时效温度、时效时间和焊盘处理方式(OSP,Ni/Pd/Au)对焊点抗剪强度及断裂模式的影响。试验结果表明:时效温度越高,时间越长,焊点的抗剪强度越低,在相同时效条件下,焊盘经Ni/Pd/Au处理的焊点抗剪强度高于经OSP处理的焊点抗剪强度;断裂模式随时效温度的升高和时间的延长,由焊球断裂向界面开裂及焊盘失效转变。
出处 《焊接技术》 北大核心 2010年第8期49-52,共4页 Welding Technology
基金 国家自然科学基金(NSFC-广东联合)重点项目(NU0734006)
  • 相关文献

参考文献9

  • 1Caroline Bramklev. A survey on the integration of product and package development [J ]. International Journal of Manufacturing Technology and Management, 2010, 3-4(19): 258-278.
  • 2Harper C A著.电子封装与互联手册[M].贾松良,译.4版.北京:电子工业出版社,2009.
  • 3Tsai K T, Liu F L, Wong E H, et al. High strain rate testing of solder interconnections [J]. Soldering & Surface Mount Technology, 2006, 2(18): 12-17.
  • 4Alam M O, Wu B Y, Chan Y C, et al. Reliability of BGA solder joints on the Au/Ni/Cu bond pad-effect of thicknesses of Au and Ni layer [J]. IEEE Transactions on Device and Materials Reliability, 2006, 3(6): 421-428.
  • 5Joel Cugnoni, John Botsis and Jolanta Janczak-Rusch. Size and constraining effects in lead-free solder joints [J ]. Advanced Engineering Materials, 2006, 8(3): 184-191.
  • 6Sridhar Canumalla, Hee-Dong Yang, Puligandla Viswanadham, et al. Package to board interconnection shear strength (PBISS) : Effect of surface finish, PWB build-up layer and chip scale package structure [J]. IEEE Transactions on Components and Packaging Technologies, 2004, 1(27): 182-190.
  • 7Islam M N, Ahmed Sharif and Chan Y C. Effect of volume in interfacial reaction between eutectic Sn-3.5%Ag-0.5% Cu solder and Cu metallization in microelectronic packaging [J ]. Journal of Electronic Materials, 2005, 2(34): 143-149.
  • 8Chiang-Ming Chuang, Po-Cheng Shih and Kwang-Lung Lin. Mechanical strength of Sn-3.5Ag-based solders and related bondings [J]. Journal of Electronic Materials, 2004, 1 (33) : 1-4.
  • 9Sang-Su Ha, Jin-Kyu Jang, Sang-Ok Ha, et al. Mechanical property evaluation of Sn-3.0A-0.5Cu BGA solder joints using high-speed ball shear test[J]. Journal of Electronic Materials, 2009, 12(38) : 2 489- 2 495.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部