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CdCl_2热处理对CdS/CdTe界面扩散和界面反应的影响研究 被引量：2

Effect of CdCl_2 annealing treatment on interdiffusion and reaction at the CdS/CdTe interface
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摘要 采用在CdTe薄膜太阳能电池结构Glass/FTO/CdS/CdTe基础上制备的Glass/FTO/CdS/CdTe/CdS体系,通过XRD,SEM,Raman,XPS研究了不同温度CdCl2空气热处理对CdS/CdTe界面互扩散、界面反应和重结晶过程的影响.研究表明,样品的表面形貌在不同温度热处理后有剧烈的差异,经300～350℃热处理后,CdS晶粒从室温时的20nm迅速增大至70nm左右,这与CdS从立方相到六方相的相变温度符合.CdS/CdTe界面在350℃左右就开始比较明显地互扩散,550℃时界面已生成具有六方纤锌矿结构的CdS0.85Te0.15.CdS因与CdTe的相互扩散并生成CdSxTe1-x而被迅速消耗.450℃以上CdS/CdTe界面部分被氧化生成CdTeO3.拉曼光谱中CdS的1LO峰在350℃左右由强变弱同时向低波数移动表明开始生成CdSxTe1-x.光电子能谱验证了CdSxTe1-x和CdTeO3在热处理过程中的形成.CdCl2防止了界面的氧化和促进了CdS/CdTe界面扩散以及CdSxTe1-x的生成. A structure of Glass/FTO/CdS/CdTe/CdS based on the CdTe solar cell（Glass/FTO/CdS/ CdTe）was adopted to study the effect of CdCl2annealing treatment on the interdiffusion and the related reaction at the CdS/CdTe interface.Investigations show that surface morphology changs dramatically under different annealing treatment temperatures.The crystal size of CdS increases from 20nm to 70nm between 300～350℃.This temperature range is consistent with that of the CdS sphalerite to wurtzite phase transformation.CdS/CdTe interdiffusion happens at around 350℃,and CdS0.85 Te0.15 with hexagonal-wurtzite structure is detected at 550℃.The CdS is quickly consumed up through interdiffusion with CdTe and forming CdSxTe1-xalloy.CdTeO3begins to form at 450℃.Raman scattering shows that the intensity of CdS 1LO peak decreases from 350℃ and shifts to lower frequency,which reveals the formation of CdSxTe1-x.The XPS spectrum of samples confirms the formation of CdSxTe1-xand CdTeO3.CdCl2protects CdS/CdTe from oxidation and promotes interdiffusion at the interface and formation of CdSxTe1-xduring air annealing.
作者 侯泽荣 万磊 白治中 王德亮
机构地区 中国科学技术大学微尺度物质科学国家实验室
出处 《中国科学技术大学学报》 CAS CSCD 北大核心 2010年第7期718-726,共9页 JUSTC
基金 国家自然科学基金(60876047 60976054) 中国科学院太阳能行动计划(173101240)资助
关键词 界面扩散 CDS CDTE CdSxTe1-x CdTe太阳能电池 interface interdiffusion CdS CdTe CdSxTe1-x CdTe solar cell
分类号 O472 [理学—半导体物理]
  • 相关文献

参考文献29

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同被引文献13

  • 1鄢强,冯良桓,宋慧瑾,郑家贵,武莉莉,张静全,黎兵,李卫,雷智.复合背接触层与背电极的匹配对CdTe太阳电池性能的影响[J].真空科学与技术学报,2008,28(2):133-137. 被引量：3
  • 2夏庚培,郑家贵,冯良桓,蔡伟,蔡亚平,黎兵,李卫,张静全,武莉莉,雷智,曾广根.CdTe多晶薄膜制备及后处理对CdS/CdTe界面的影响[J].真空科学与技术学报,2007,27(2):131-134. 被引量：6
  • 3Morales-Acevedo A. Can We Improve the Record Efficiency of CdS/CdI'e Solar Cells? [J]. Solar Energy Materials and Solar Cells, 2006, 90(15) :2213 - 2220.
  • 4Dhere R G, Asher S E, Jones K M, et al. Characterization of Intermixing at the CdS/CdI'e Interface in CSS Deposited Cdle [J]. AIP Conference Proceedings, 1996, 353( 1) :392 - 399.
  • 5Arlund S, Itala R, Eskela L, et al. Characterization of Etching Procedure in Preparation of CdI'e Solar Cells[J] . Solar Energy Materials and Solar Cells , 1996,44(2): 177 - 190.
  • 6Nakamura K, Fujihara T, Toyama T, et al. Influence of CdCl2 Treatment on Structural and Electrical Properties of Highly Efficient 2 pm-Thick CdS/CdI'e Thin Film Solar Cells [J] . Japanese Journal of Applied Physics, 2002, 41 (7): 4474 - 4480.
  • 7Carnman M, Gasin P, Vatavu S. The Influence of Thermal Annealing in Presence of CdCl2 on the Electrophysical Properties of the CdS/CdI'e Solar Cells[J]. Thin Solid FiIms,2005,480: 254- 258.
  • 8Metzger W K, Alhin D, Romero M J, et al. CdCl2 Treatment, S Diffusion, and Recombination in Polycrystalline CdI'e [J] . Journal of Applied Physics, 2006, 99(IO) : 103703.
  • 9Li K , Wee A T S, Lin J, et al. A Microstructural Study on the Surface and Interface of CdI'e/CdS Solar Cells[J] . Journal of Materials Science: Materials in Electronics, 1997 , 8 (3) : 125 -132.
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中国科学技术大学学报
2010年 第7期

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