摘要
在研究等离子聚合法所合成的聚对二甲苯(ppPX)薄膜的化学结构和性能的基础上,考察了ppPX作为铜在Si-SiLK基体上阻隔层的应用可能性.在特定辉光射频条件下,ppPX膜表面的苯环能够保留。加热退火后,铜向裸Si-SiLK和向经ppPX接枝修饰的Si-SiLK基体的扩散程度存在差异。经由Ar和N_2载气所承载的对二甲苯单体所聚合得到的ppPX,具有不同的结构和性能,后者能改善铜和聚合物膜间的粘附力。因此,在Si-SiLK基底表面制备ppPX膜,可提高铜在基体上的粘附强度,又能阻隔铜向内基体内扩散。
Plasma graft polymerization of para-xylene(ppPX) on argon plasma-pretreated porous SiLK films coated Si(100) wafers(Si-SiLK) and retardation of copper diffusion on ppPX are investigated in the present work.The topography of the ppPX grafted Si-SiLK(Si-SiLK-g-ppPX) surfaces was analyzed by atomic force microscopy.X-ray photoelectron spectroscopy and fourier transform infrared spectroscopy results show that the benzene rings of ppPX can be retained to a large extent under a certain grow discharge conditions.Field emission scanning electron microscopy reveals the extent of copper diffusion into the pristine and graft-modified Si-SiLK substrates after thermal annealing.Since para-xylene monomers were introduced with argon(Ar) and nitrogen(N_2),the different chemical structures of two kinds of ppPX are achieved and it is found that nitrogen could improve the adhesion between copper and the polymer film. Therefore,ppPX surface prepared on Si-SiLK wafers surface can serve a promising adhesion promotion layer and a diffusion barrier for copper.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2010年第4期353-357,共5页
Chinese Journal of Materials Research
基金
国家自然科学基金20704039
河南省高校科技创新人才支持计划2010HASTIT023
河南省国际科技合作计划094300510078资助项目~~
关键词
有机高分子材料
等离子体聚合
聚对二甲苯
扩散隔离
低介电常数
organic polymer materials
plasma polymerization
para-xylene
diffusion barrier
low-electronic constant