期刊文献+

等离子体聚对二甲苯的制备及其应用 被引量:1

The Preparation and Application of Plasma Polymerized Paraxylene
原文传递
导出
摘要 在研究等离子聚合法所合成的聚对二甲苯(ppPX)薄膜的化学结构和性能的基础上,考察了ppPX作为铜在Si-SiLK基体上阻隔层的应用可能性.在特定辉光射频条件下,ppPX膜表面的苯环能够保留。加热退火后,铜向裸Si-SiLK和向经ppPX接枝修饰的Si-SiLK基体的扩散程度存在差异。经由Ar和N_2载气所承载的对二甲苯单体所聚合得到的ppPX,具有不同的结构和性能,后者能改善铜和聚合物膜间的粘附力。因此,在Si-SiLK基底表面制备ppPX膜,可提高铜在基体上的粘附强度,又能阻隔铜向内基体内扩散。 Plasma graft polymerization of para-xylene(ppPX) on argon plasma-pretreated porous SiLK films coated Si(100) wafers(Si-SiLK) and retardation of copper diffusion on ppPX are investigated in the present work.The topography of the ppPX grafted Si-SiLK(Si-SiLK-g-ppPX) surfaces was analyzed by atomic force microscopy.X-ray photoelectron spectroscopy and fourier transform infrared spectroscopy results show that the benzene rings of ppPX can be retained to a large extent under a certain grow discharge conditions.Field emission scanning electron microscopy reveals the extent of copper diffusion into the pristine and graft-modified Si-SiLK substrates after thermal annealing.Since para-xylene monomers were introduced with argon(Ar) and nitrogen(N_2),the different chemical structures of two kinds of ppPX are achieved and it is found that nitrogen could improve the adhesion between copper and the polymer film. Therefore,ppPX surface prepared on Si-SiLK wafers surface can serve a promising adhesion promotion layer and a diffusion barrier for copper.
出处 《材料研究学报》 EI CAS CSCD 北大核心 2010年第4期353-357,共5页 Chinese Journal of Materials Research
基金 国家自然科学基金20704039 河南省高校科技创新人才支持计划2010HASTIT023 河南省国际科技合作计划094300510078资助项目~~
关键词 有机高分子材料 等离子体聚合 聚对二甲苯 扩散隔离 低介电常数 organic polymer materials plasma polymerization para-xylene diffusion barrier low-electronic constant
  • 相关文献

参考文献21

  • 1K.Derbyshire, Fueling the productivity engine, Solid State Wechnol., 41(2), 57(1998).
  • 2Semiconductor Industry Association, The National Technology Roadmap for Semiconductors, International SE- MATECH, Austin, TX(1999).
  • 3D.H.Zhang, S.W.Loh, C.Y.Li, R.Liu, A.T.S.Wee, L.Zhang, Y.K.Lee, P.D.Foo, Study of Cu diffusion in Cu/TaN/SiO2/Si multilayer structures, Sur. Rev. Lett., 8(5), 527(2001).
  • 4Y.K.Lee, K.Maung Latt, K.JaeHyung, T.Osipowicz, K.Lee, Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2, Mater. Sci. Eng., B, 68(2), 99(1999).
  • 5S.Q.Wang, S.Suthar, C.Hoeflichm, B.J.Burrow, Diffusion barrier properties of TiW between Si and Cu, J. Appl. Phys., 73(5), 2301(1993).
  • 6V.M.Dubin, Y.Shacham Diamand, B.Zhao, P.K.Vasudev, C.H.Ting, Selective and blanket electroless copper deposition for ultralarge scale integration, J.Electrochem. Soc., 144(3), 898(1997).
  • 7Y.Okinaka, T.Osaka, In: H.Gerischer, C.W.Tobias, Editors, Advances in Electrochemical Science and Engineering, Vol.3, VCH, Weinheim, 55(1994).
  • 8Y.Y.Cheng, J.Y.Kan, I.S.Lin, Adhesion studies of low-k silsesquioxane. Thin Solid Films, 462-463, 297(2004).
  • 9T.K.Goh, T.K.S.Wong, Investigation of structure, thermal and oxygen plasma stability of mesoporous methyl- silsesquioxane films by X-ray reflectivity and small angle scattering. Microelectron. Eng., 75(3), 33(2004).
  • 10M.Morgen, E.T.Ryan, J.H.Zhao, C.Hu, T.Cho, P.S.Ho, Low dielectric constant materials for ULSI interconnects, Annu. Rev. Mater. Sci., 30, 645(2000).

同被引文献40

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部