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新结构雪崩光探测器的特性仿真及后工艺优化

Features Simulation and Fabrication Process of New Resonant Cavity Enhanced Avalanche Photodiodes
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摘要 报道了一种在倍增区引入AlxGa1-xAs带隙梯度结构的谐振腔增强型雪崩光探测器,并提出优化其后工艺制作的新方法。通过将Al0.4Ga0.6As(28nm)-Al0.2Ga0.8As(10nm)-GaAs(50nm)带隙梯度结引入雪崩探测器的高场区,可以实现对探测器噪声和频率响应两个主要性能的优化。数值仿真表明,该结构探测器具有较小的噪声(有效离化系数为0.1),约33GHz的3dB带宽(增益为5),在增益为15时可获得420GHz的增益带宽积。在实际的后工艺制作中,提出使用苯并环丁烯树脂进行InP/空气隙DBR反射镜与雪崩探测器结构粘合的方法,简化了工艺流程。 A novel structural design of resonant cavity enhanced avalanche photodiodes（RCE-APD）,which introduces the AlxGa1-xAs bandgap graded structure into the multiplication region,and a new method for optimizing the fabrication process of RCE-APD is presented.The noise characteristics and frequency response of the avalanche photodiodes can be optimized by placing the structure of Al0.4Ga0.6As（28nm）-Al0.2Ga0.8As（10nm）-GaAs（50nm）into the high field region.Through theoretical analysis,a low noise（keff≈0.1）,a bandwidth as high as 33 GHz and a record gain-bandwidth product about 420GHz（G=15）are obtained.Benzocyclobutene（BCB）is used to stick the InP/Air DBR resonant-cavity and the photo-detector together,simplifying the fabrication process.
作者 张帅 黄永清 陶彦耘 张欣 宋海兰 任晓敏 王琦 黄辉
机构地区 北京邮电大学信息光子学与光通信教育部重点实验室.北京
出处 《半导体光电》 CAS CSCD 北大核心 2010年第4期501-506,共6页 Semiconductor Optoelectronics
基金 国家“863”计划项目(2007AA03Z418) 高等学校学科创新引智计划项目(B07005) 教育部长江学者和创新团队发展计划项目(IRT0609)
关键词 雪崩光探测器 频率响应 过剩噪声因子 AlGaAs带隙梯度结构 苯并环丁烯 avalanche photodiode frequency response excess noise factor AlGaAs bandgap graded structure BCB
分类号 TN364.2 [电子电信—物理电子学]
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参考文献16

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半导体光电
2010年 第4期

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