摘要
对于给定波长的超辐射发光二极管,根据应变量子阱理论,研究了器件有源层组分与量子阱宽度的关系,并讨论了量子阱中In组分相对于不同波长的最小临界值。用MOCVD生长器件,实验结果与理论计算值吻合。
The relationship between the width of the single quantum well（SQW）and the Indium composition in the 1 053nm Superluminescent Diodes（SLD）was researched according to the theory of strained effect in the quantum well.The minimum Indium composition for the given lasing wavelength was discussed.Then experiments were carried out on the diodes grown by Metal Organic Chemical Vapor Deposition（MOCVD）.The experimental results show that the calculated value agrees well with theoretical calculations.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第4期535-538,共4页
Semiconductor Optoelectronics
