摘要
用电化学沉积方法在Si衬底上制备出Zn-ZnO纳米结构,并在空气中不同温度的条件下对其进行退火处理。分别用X射线衍射仪、扫描电子显微镜和荧光光度分光计对所得样品进行表征。通过对测试结果的分析和讨论发现,退火过程改变了Zn-ZnO纳米结构的物相、结构和晶体质量,进而改变了它的荧光性能。重点关注退火过程对样品紫外荧光峰的影响,并通过高斯拟合揭示了各条件下紫外荧光峰的发光机理。通过比较,800℃的退火条件能明显改善Zn-ZnO纳米结构的表面形貌和晶体质量,显著增强其紫外荧光峰的强度。
Zn-ZnO nano-structures were prepared firstly by electrochemical deposition technology and then annealed at different temperatures in air.The prepared samples were characterized by means of XRD,SEM and PL spectroscopy.Based on the analysis and discussion on the testing results,it can be seen that the annealing process may change the component,structure and crystal quality of Zn-ZnO nano-structures.And these changes will alter the PL properties of Zn-ZnO nano-structures.The present work pays close attention to the effect of annealing process on the ultroviolet（UV）emission in ZnO.And the nature of mechanisms of UV emissions is revealed with Gauss fitting to the PL spectra of the samples after different treatings.Comparisons show that annealing at 800℃ can indeed improve the surface morphology and crystal quality of Zn-ZnO nanostructures and significantly enhance the intensity of UV emission.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第4期545-549,共5页
Semiconductor Optoelectronics
