KOH各向异性腐蚀中预处理对硅表面粗糙度的影响

Influence of Pretreatment on Silicon Surface Roughness in KOH Anisotropic Silicon Etching

通过实验研究表明:不同预处理方法对KOH腐蚀后硅片表面粗糙度的影响不同,分别用35℃的BOE(7:1氟化铵腐蚀液)、常温BOE、10:1HF、50:1HF含HF成分的腐蚀液对硅片进行预处理,再和未做预处理的硅片在同等条件下进行KOH腐蚀,实验结果发现预处理后硅片表面粗糙度比未做处理的硅片表面粗糙度增加约1nm左右,即经过含HF成分的腐蚀液预处理后的硅片再进行KOH腐蚀,其表面粗糙度将变差。

Experimental research shows that different pretreatment methods make different effects on the surface roughness of the silicon wafer after the KOH etching.35℃ BOE,room temperature BOE,10：1HF and 50：1HF were used as etching solutions to make pretreatments on silicon wafers.The different KOH etching results were compared with the un-pretreatment etching ones under the same conditions.The experimental result shows the surface roughness of the silicon wafer with pretreatment is about 1nm thicker than that of the un-pretreatment one.The surface roughness of the silicon wafer which was pretreated in HF solution and then eteched with KOH becomes worse.